Bandgap Engineering Superlattice Simulation Tool (BESST)
Bandgap Engineering Superlattice Simulation Tool (BESST) is designed for simulation of optoelectronic devices based on group-III nitride superlattices (SLs). The BESST package allows calculating of individual SL properties as well as modeling of band diagram and carrier transport in a device structure consisted of a sequence of different p- and n-doped SL regions. The light emission spectra from such a device are also predicted.
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Supported Technologies
Windows 95/98/ME,
Windows XP/2000/NT
Software
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Pricing
- Unspecified -
besst@semitech.us
+1 804 304 8092
Additional Product Information
1. Overview
Short-period superlattices (SPSLs) serve as important elements of a device heterostructure design, aimed at solving either technological or some design problems. In the case of III-nitrides, the SPSLs are used either for reduction of dislocation density in epitaxial materials, enhancement of Mg acceptor activation, increase of hole injection efficiency or even as n- and p-emitters and active regions in light emitting diodes and laser diodes. To employ the advantages of SPSLs, it is necessary to know their electric and optical properties as a function of SPSL parameters—thicknesses and compositions of the constituent layers.
The BESST package allows calculating of individual SPSL properties as well as modeling of band diagram and carrier transport in a device structure consisted of a sequence of different p- and n-doped SPSL regions. The light emission spectra from such a device are also predicted.
2. BESST 2.0 options
- Calculation of key electrical properties of individual SLs involved in the structure. Energy levels and wave functions of localized carrier states, parameters of minibands, carrier concentration and impurity ionization, electric field distribution, conductivity of SL.
- Simulation of the whole device at given bias by self-consistent solution of Poisson and Schrodinger equations coupled with carrier transport equations. Band diagram, energy levels and wave functions of carrier states in each QW, carrier concentrations and impurity ionization, carrier fluxes and recombination rates, emission spectrum. Current-voltage (I-V) characteristic can be calculated by series of computations.
The BESST package provides one with the information that forms a basis for deeper insight into operation of SL based devices and helps to optimize the parameters of individual SLs as well as their interconnection.