SELES - Segregation Effect on Light Emission Spectrum
The main goal of the one-dimensional SELES code is to make a bridge from MOVPE growth receipts to the characteristics of light-emitting diodes (LEDs) based on a group-III nitride heterostructures. Basically, the LED heterostructure consists of the n- and p-emitters, separated by a single or multiple quantum well active region. But the real composition profile can be significantly different from “ideal” that, i.e. expected from the precursor switching schedules and thick layers growth results. The indium surface segregation is known to be the most important effect leading to such difference.
The SELES package provides a deeper insight into that matter. The real composition profile is calculated from the growth parameters specified in terms of real MOVPE reactor. The indium surface segregation, desorption and strain effect on indium incorporation are taken into account. The code is also capable of modeling advanced methods for control of interface abruptness like growth interruption, temperature ramping, etc. Due to these features, the SELES package is an effective simulation tool supporting experimental optimization of the growth process.
With the SELES software, one can also estimate the effect of composition profile variation on the LED characteristics. The known composition profile is used to calculate the band diagram of the LED heterostructure and light emission spectrum. An accurate quantum-mechanical description of the carriers in the heterostructure, based on the self-consistent solution of the Poisson and Schrödinger equations, is provided within the SELES code.
The SELES 1.0 software includes the following options:
calculation of the composition profile in a LED heterostructure with account for indium surface segregation; calculation of the band diagram of a LED heterostructure at a given bias; calculation of light emission spectrum at given bias.
The user interface includes easy stage-by-stage input of the growth process in terms of real MOVPE reactor: temperature, pressure, and precursor and carrier gas flow rates, as well as visualization of the simulation results.
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Features
- » Calculation of the composition profile in a LED heterostructure with account for indium surface segregation
- » Calculation of the band diagram of a LED heterostructure at a given bias
- » Calculation of light emission spectrum at given bias
- » The known composition profile is used to calculate the band diagram of the LED heterostructure and light emission spectrum
- » The potential distribution in a heterostructure is calculated by the self-consistent solution of the Poisson and Schrödinger equations.
- » Exact account of localized and distributed polarization charges in the LED structure induced
- » Assuming the vertical band-to-band transitions, the code takes into account the recombination between the electron and hole states confined in the same quantum well
English
Supported Technologies
Windows 95/98/ME,
Windows XP/2000/NT
- Not Applicable -
- Not Applicable -
Software
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galyukov@semitech.us
+1 804 615 0038
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