Crystal Growth Simulator (CGSim)
Crystal Growth Simulator is a tool for heat transport analysis and control of crystal growth by the Czochralski (Cz), LEC, and VCz methods. The code provides information to growers on the most important physical processes responsible for crystal growth and quality. The CGSim package contains several modules such as Basic CGSim, module 'Defects', Flow Module, and CGSim View.
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Supported Technologies
Windows XP/2000/NT
Software
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Pricing
- Unspecified -
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Additional Product Information
Crystal Growth Simulator is a tool for heat transport analysis and control of crystal growth by the Czochralski and LEC methods. Additional modules allow simulation of steady and unsteady turbulent convection, thermal stresses and defects predicting, impurity transport modeling, etc.
Capabilities of Basic CGSim include: radiative heat transport, conductive heat transport, heater power adjustment to provide the required crystallization rate, calculation of crystallization front geometry, automatic reconstruction of the geometry for several crystal positions and special models for anisotropic characteristics of materials. The Basic CGSim program is developed for industries and research teams. GUI of the Basic CGSim code requires no special computational skills. All calculation steps are highly automatized to reduce user efforts.
Module 'Defects' is a part of the CGSim package specially designed for analysis of thermal elastic stress distribution, behavior of initial defects such as self-interstitials and vacancies in silicon crystals, cluster distribution in silicon crystals (voids and oxygen precipitates).
Flow Module is a part of the CGSim package specially designed for detailed 2D or 3D modeling of steady and unsteady convection and conductive heat transfer in a crystallization zone including melt, crystal, crucible, gas or encapsulant . The module allows the user to account for the numerous phenomena, namely conductive heat transport, laminar flow, turbulent flow within the RANS, LES, or DNS approaches, prediction of crystallization front shape, magnetic field effect, impurity transport, stress computation, and scalar transport.
Besides the global heat computations with the given heater powers, CGSim allows adjusting the powers to provide a certain crystallization rate and prediction of crystallization front geometry.
COmprehensive postprocessing is done using CGSimView visualizer.