HEpiGaNS - Hydride Epitaxial GaN Simulator
The software tool HEpiGaNS is designed for modeling of GaN crystal growth by hydride vapor phase epitaxy (HVPE) using advanced models of surface kinetics important for adequate predictions of the growth. You can download a presentation, demosntrating HEpiGaNS capabilities, documentation, demo version of the software and application examples.
The software tool HEpiGaNS provides growers with exhaustive information about the heat and mass transfer in the reactor. This includes information on the distribution of temperature, species fractions, mixture velocity, heat fluxes and other parameters in the overall reactor and along all boundaries of reactor parts. This, in turn, provides wide possibilities for profound investigations of the phenomena underlying the growth, allowing optimization of the reactor geometry and technological process.
The problem is considered in 2D plane and axisymmetric approximations. The simulation includes modeling of the heat transfer in the overall reactor and reactive species mass transport in the growth cavity. The software tool employs an original heterogeneous chemistry model that provides an efficient description of interaction of multi-component vapor with the reactive surface. The approach suggested allows description of the chemical processes at the gas-solid interfaces in a wide range of temperature and pressure.
Unstructured non-matched computational grid is used in numerical simulation. The grid generation is carried out for each geometry block providing the required grid density.
HEpiGaNS has a user-friendly graphical interface which is aimed at minimization of the user efforts needed for the problem specification. The user can easily modify the reactor geometry, change position of the heaters, etc.
Run-time and post-processing visualization is available within the GUI, presenting the two-dimensional and one-dimensional distributions of temperature and other variables. In addition, the computational results are stored in files allowing a post-processing analysis using commercial Tecplot graphical package.
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Features
- » Modeling of the global heat transfer problem in the reactor, including inductive, conductive, convective, and radiative heating
- » Modeling of the mass transport in the growth cavity that includes multi-component diffusion of the reactive species and convective flow
- » Computation of the thermal stress distribution in the crystal
- » Visualization of the obtained results
English
Supported Technologies
Windows XP/2000/NT
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Software
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Pricing
Users (# of seats)
galyukov@semitech.us
+1 804 615 0038
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