Virtual Reactor (SiC)
Virtual Reactor (SiC) is a software tool designed as an easy-to-learn and user friendly computer simulator of long-term growth of bulk SiC crystals by sublimation. It allows the user to analyze the growth-related phenomena, follow the crystal shape evolution during the whole growth, study the source evolution and defect dynamics. Virtual Reactor is designed to serve for simplifying and accelerating optimization of both growth system design and process conditions and is intended to be exploited by the growth engineers for R&D and production.
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Supported Technologies
Windows XP/2000/NT
Software
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Pricing
- Unspecified -
vir@semitech.us
Additional Product Information
Overview
Virtual Reactor is a software tool designed as an easy-to-learn and user friendly computer simulator of long-term growth of bulk SiC crystals by sublimation. It allows the user to analyze the growth-related phenomena, follow the crystal shape evolution during the whole growth, study the source evolution and defect dynamics. Virtual Reactor is designed to serve for simplifying and accelerating optimization of both growth system design and process conditions and is intended to be exploited by the growth engineers for R&D and production.
Virtual Reactor accounts for major specific features of sublimation growth and includes advanced models for the most important physical processes occurring in the growth system as well as the database for properties of the crystal, powder, graphites and thermal insulation. The software simulates global heat transfer in the whole system and inside the crucible, mass transport in the growth cell and powder charge, accounting for deposit formation and for evolution of the powder source during long-term growth. Virtual characterization of the growing crystal at various stages of growth, in particular, analysis of thermo-elastic stress and dislocation density distribution is available.
Virtual Reactor implements advanced models of physical phenomena involved in bulk SiC growth. It employs highly efficient algorithms and programming technologies, such as C++, object oriented programming, non-matched grids, etc. The code development was aimed at the minimization of the man-power effort.
The key feature of the approach implemented is that the user of the code should only prescribe the initial configuration of the growth system and program the variation of the operating conditions during the long-term growth, whereas most temporal changes in the system configuration are made automatically during the growth simulation.
The problem is considered in 2D axisymmetric approximation that provides an adequate simulation of the sublimation growth of hexagonal SiC polytypes. Geometry of the growth system can be entered manually or obtained by editing an imported CAD file. Identification of the computational domain topology is be done automatically. Specification of the materials properties is simplified by the use of the extendable data base.